High-k / metal gate CMOS transistors with TiN gates
US9721847B2 · kind B2 · utility
2Cited by
3References
19Claims
0Family size
Assignee
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Key dates
| Filing date | May 28, 2015 |
| Grant date | Aug 1, 2017 |
| Priority date | — |
| Expiry date | Jun 23, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit with a thick TiN metal gate with a work function greater than 4.85 eV and with a thin TiN metal gate with a work function less than 4.25 eV. An integrated circuit with a replacement gate PMOS TiN metal gate transistor with a workfunction greater than 4.85 eV and with a replacement gate NMOS TiN metal gate transistor with a workfunction less than 4.25 eV. An integrated circuit with a gate first PMOS TiN metal gate transistor with a workfunction greater than 4.85 eV and with a gate first NMOS TiN metal gate transistor with a workfunction less than 4.25 eV.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.