Preservation of fine pitch redistribution lines
US9721886B2 · kind B2 · utility
4Cited by
1References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2013 |
| Grant date | Aug 1, 2017 |
| Priority date | — |
| Expiry date | Jun 28, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/13565
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An embodiment includes a semiconductor apparatus comprising: a redistribution layer (RDL) including a patterned RDL line having two RDL sidewalls, the RDL comprising a material selected from the group comprising Cu and Au; protective sidewalls directly contacting the two RDL sidewalls; a seed layer including the material; and a barrier layer; wherein (a) the RDL line has a RDL line width orthogonal to and extending between the two RDL sidewalls, and (b) the seed and barrier layers each include a width parallel to and wider than the RDL line width. Other embodiments are described herein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.