Hiten Kothari
11Patents
3h-index
26Co-inventors
60Inventor score
Filing activity: Jul 2, 2004 → Sep 19, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9449913B2 | 3D interconnect structure comprising fine pitch single damascene backside metal redistribution lines combined with through-silicon vias | Electricity | 15 | Active |
| US9142510B2 | 3D interconnect structure comprising through-silicon vias combined with fine pitch backside metal redistribution lines fabricated using a dual damascene type approach | Electricity | 14 | Active |
| US9721886B2 | Preservation of fine pitch redistribution lines | Electricity | 4 | Active |
| US11393754B2 | Contact over active gate structures with etch stop layers for advanced integrated circuit structure fabrication | Electricity | 2 | Active |
| US9818710B2 | Anchored interconnect | Electricity | 2 | Active |
| US7361261B2 | Method of preparing a chiral substrate surface by electrodeposition | Chemistry; Metallurgy | 0 | Expired |
| US11489112B2 | Resistive random access memory device and methods of fabrication | Electricity | 0 | Active |
| US12406931B2 | Contact over active gate structures with etch stop layers for advanced integrated circuit structure fabrication | Electricity | 0 | Active |
| US9530740B2 | 3D interconnect structure comprising through-silicon vias combined with fine pitch backside metal redistribution lines fabricated using a dual damascene type approach | Electricity | 0 | Active |
| US12261122B2 | Contact over active gate structures with etch stop layers for advanced integrated circuit structure fabrication | Electricity | 0 | Active |
| US11430948B2 | Resistive random access memory device with switching multi-layer stack and methods of fabrication | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.