Memory devices including capacitor structures having improved area efficiency
US9722014B2 · kind B2 · utility
0Cited by
8References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 2, 2015 |
| Grant date | Aug 1, 2017 |
| Priority date | — |
| Expiry date | Oct 2, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/50
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Semiconductor structures including a plurality of conductive structures having a dielectric material therebetween are disclosed. The thickness of the dielectric material spacing apart the conductive structures may be adjusted to provide optimization of capacitance and voltage threshold. The semiconductor structures may be used as capacitors, for example, in memory devices. Various methods may be used to form such semiconductor structures and capacitors including such semiconductor structures. Memory devices including such capacitors are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.