Silicon carbide semiconductor device

US9722017B2 · kind B2 · utility

Assignee

• Mitsubishi Electric Corporation · JP

Inventors

• Takaaki TOMINAGA · Tokyo, JP
• Naoyuki KAWABATA · Tokyo, JP
• Nobuyuki Tomita · Tokyo, JP

Key dates

• Filing date: Jan 16, 2015
• Grant date: Aug 1, 2017
• Expiry date: Jan 16, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/834

Abstract

A silicon carbide semiconductor device capable of achieving a decrease in ON resistance and an increase in breakdown voltage and a method for manufacturing a silicon carbide semiconductor device. A silicon carbide semiconductor device includes a silicon carbide substrate and a drift layer. The drift layer includes a breakdown voltage holding layer extending from a point where a doping concentration has a predetermined value to a surface of the drift layer. The doping concentration in the breakdown voltage holding layer continuously decreases from the point where the doping concentration has the predetermined value to a modulation point located further toward the surface of the drift layer than a midpoint in a film thickness direction of the breakdown voltage holding layer. The doping concentration in the breakdown voltage holding layer continuously increases from the modulation point to the surface of the drift layer.