Method for manufacturing semiconductor device
US9722056B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2016 |
| Grant date | Aug 1, 2017 |
| Priority date | — |
| Expiry date | Sep 27, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02631
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. Oxygen is introduced into a surface of an insulating film, and then, an oxide semiconductor, a layer which is capable of blocking oxygen, a gate insulating film, and other films which composes a transistor are formed. For at least one of the first gate insulating film and the insulating film, three signals in Electron Spin Resonance Measurement are each observed in a certain range of g-factor. Reducing the sum of the spin densities of the signals will improve reliability of the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.