Oxide semiconductor transistor and manufacturing method thereof
US9722093B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 1, 2016 |
| Grant date | Aug 1, 2017 |
| Priority date | — |
| Expiry date | Sep 1, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
An oxide semiconductor transistor includes an oxide semiconductor channel layer, a metal gate, a gate insulation layer, an internal electrode, and a ferroelectric material layer. The metal gate is disposed on the oxide semiconductor channel layer. The gate insulation layer is disposed between the metal gate and the oxide semiconductor channel layer. The internal electrode is disposed between the gate insulation layer and the metal gate. The ferroelectric material layer is disposed between the internal electrode and the metal gate. The ferroelectric material layer in the oxide semiconductor transistor of the present invention is used to enhance the electrical characteristics of the oxide semiconductor transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.