Low dielectric constant interlayer dielectrics in spin torque magnetoresistive devices
US9722174B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 9, 2015 |
| Grant date | Aug 1, 2017 |
| Priority date | — |
| Expiry date | Jan 9, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/00
Abstract
By manufacturing magnetoresistive devices using low-k dielectric materials as the inter-layer dielectrics and higher-k dielectric materials for hard masks and encapsulation, the overall dielectric constant characteristics of the magnetoresistive devices can be kept lower, thereby decreasing capacitance and allowing for higher speed operations. Elimination or reduction of residual higher-k dielectric material through stripping or other processes minimizes “islands” of higher-k dielectric material that can detract from overall dielectric constant performance. One or more masking and one or more etching steps can be used to form the devices either with or without the additional stripping of the higher-k material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.