Patent · US Active

Integrated level shifter

US9722609B2 · kind B2 · utility

30Cited by

2References

20Claims

0Family size

Assignee

Navitas Semiconductor Limited · IE

Inventors

Daniel M. Kinzer · El Segundo, US
Santosh Sharma · South Burlington, US
Ju Zhang · Monterey Park, US

Key dates

Filing date	Feb 13, 2017
Grant date	Aug 1, 2017
Priority date	—
Expiry date	Feb 13, 2037

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02B70/10
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.