Monomer for a hardmask composition, hardmask composition comprising the monomer, and method for forming a pattern using the hardmask composition
US9725389B2 · kind B2 · utility
1Cited by
7References
12Claims
0Family size
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Key dates
| Filing date | Nov 29, 2012 |
| Grant date | Aug 8, 2017 |
| Priority date | — |
| Expiry date | Nov 29, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are a monomer for a hardmask composition represented by the following Chemical Formula 1, a hardmask composition including the monomer, and a method of forming a pattern using the same.In Chemical Formula 1, A, A′, L and n are the same as in the detailed description.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.