Testing method and testing system for semiconductor element
US9726713B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 16, 2013 |
| Grant date | Aug 8, 2017 |
| Priority date | — |
| Expiry date | Aug 26, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/275
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A testing method and testing system for a semiconductor element are provided. The method includes following steps. A level of a testing electrostatic discharge (ESD) voltage is determined. A plurality of sample components is provided. The testing ESD voltage is imposed on the sample components for testing ESD decay rates of the sample components. ESD withstand voltages of the sample components are detected. The relation between the ESD withstand voltages and the electrostatic discharge rates are recorded to a database. The testing ESD voltage is imposed on the semiconductor element for testing an ESD decay rate of the semiconductor element. The database is looked up according to the ESD decay rate of the semiconductor element to determine an ESD withstand voltage of the semiconductor element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.