Cleaning composition, cleaning process, and process for producing semiconductor device
US9726978B2 · kind B2 · utility
1Cited by
4References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 20, 2015 |
| Grant date | Aug 8, 2017 |
| Priority date | — |
| Expiry date | May 20, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A cleaning composition for removing plasma etching residue and/or ashing residue formed above a semiconductor substrate is provided that includes (component a) water, (component b) a hydroxylamine and/or a salt thereof, (component c) a basic organic compound, and (component d) an organic acid and has a pH of 7 to 9. There are also provided a cleaning process and a process for producing semiconductor device employing the cleaning composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.