Light-erasable embedded memory device and method of manufacturing the same
US9728260B1 · kind B1 · utility
4Cited by
1References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2016 |
| Grant date | Aug 8, 2017 |
| Priority date | — |
| Expiry date | Apr 28, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2216/26
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A light-erasable embedded memory device and a method for manufacturing the same are provided in the present invention. The light-erasable embedded memory device includes a substrate with a memory region and a core circuit region, a floating gate on the memory region of the substrate, at least one light-absorbing film above the floating gate, wherein at least one light-absorbing film is provided with dummy via holes overlapping the floating gate, and a dielectric layer on the light-absorbing film and filling up the dummy via holes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.