I-layer vanadium-doped PIN type nuclear battery and the preparation process thereof

US9728292B2 · kind B2 · utility

Assignee

• Xidian University · CN

Inventors

• Hui Guo · Xi'an, CN
• Keji Zhang · Xi'an, CN
• Yuming Zhang · Nicholasville, US
• Yujuan Zhang · Xi'an, CN
• Chao Han · Columbus, US
• Yanqiang Shi · Xi'an, CN

Key dates

• Filing date: May 31, 2012
• Grant date: Aug 8, 2017
• Expiry date: Jul 17, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0262
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A layer I vanadium-doped PIN-type nuclear battery, including from top to bottom a radioisotope source layer(1), a p-type ohm contact electrode(4), a SiO2 passivation layer(2), a SiO2 compact insulation layer(3), a p-type SiC epitaxial layer(5), an n-type SiC epitaxial layer(6), an n-type SiC substrate(7) and an n-type ohm contact electrode(8). The doping density of the p-type SiC epitaxial layer(5) is 1×1019 to 5×1019 cm−3, the doping density of the n-type SiC substrate(7) is 1×1018 to 7×1018 cm−3. The n-type SiC epitaxial layer(6) is a low-doped layer I formed by injecting vanadium ions, with the doping density thereof being 1×1013 to 5×1014 cm−3. Also provided is a preparation method for a layer I vanadium-doped PIN-type nuclear battery. The present invention solves the problem that the doping density of layer I of the exiting SiC PIN-type nuclear battery is high.