Method of degassing
US9728432B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 24, 2015 |
| Grant date | Aug 8, 2017 |
| Priority date | — |
| Expiry date | Nov 24, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67748
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of degassing semiconductor substrates includes sequentially loading a plurality of semiconductor substrates into a degas apparatus, and degassing the semiconductor substrates in parallel, the degassing of each semiconductor substrate commencing at a different time related to the time at which the semiconductor substrate was loaded into the degas apparatus. The method further includes unloading a semiconductor substrate from the degas apparatus when the semiconductor substrate has been degassed, while semiconductor substrates which were loaded later in the sequence are still being degassed. The degassing of the semiconductor substrates is performed at pressure of less than 10−4 Torr, and the degas apparatus is pumped continuously during the degassing of the semiconductor substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.