Method for manufacturing semiconductor device
US9728441B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 3, 2015 |
| Grant date | Aug 8, 2017 |
| Priority date | — |
| Expiry date | Sep 3, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/68381
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device includes: bonding at least a part of the rear surface of a semiconductor wafer, and a supporting substrate in use of using a silane coupling agent; forming a functional structure on a front surface of the semiconductor wafer; placing a condensation point of laser light transmitted through the semiconductor wafer on a bonding interface between the semiconductor wafer and the supporting substrate, and irradiating the bonding interface with the laser light, thereby forming a fracture layer on at least a part of an outer circumferential section of the bonding interface; separating the bonding interface; and carrying out rear surface processing on the rear surface of the semiconductor wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.