Semiconductor devices and methods of manufacturing the same
US9728490B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 10, 2016 |
| Grant date | Aug 8, 2017 |
| Priority date | — |
| Expiry date | May 10, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1434
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a via structure penetrating through a substrate, a portion of the via structure being exposed over a surface of the substrate, a protection layer pattern structure provided on the surface of the substrate and including a first protection layer pattern and a second protection layer pattern, the first protection layer pattern surrounding a lower sidewall of the exposed portion of the via structure and exposing an upper sidewall of the exposed portion of the via structure, the second protection layer pattern exposing a portion of the top surface of the first protection layer pattern adjacent to the sidewall of the via structure, and a pad structure provided on the via structure and the protection layer pattern structure and covering the top surface of the first protection layer pattern exposed by the second protection layer pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.