Semiconductor device with electrostatic discharge protection structure

US9728529B2 · kind B2 · utility

Assignee

• Infineon Technologies Dresden GmbH & Co. KG · DE

Inventors

• Joachim Weyers · Grevesmühlen, DE
• Franz Hirler · Isen, DE
• Anton Mauder · Kolbermoor, DE
• Markus Schmitt · Neubiberg, DE
• Armin Tilke · Beacon, US
• Thomas Bertrams · Dresden, DE

Key dates

• Filing date: Apr 14, 2014
• Grant date: Aug 8, 2017
• Expiry date: Apr 14, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/83

Abstract

A semiconductor device comprises a semiconductor body having a first surface and a second surface opposite to the first surface. The semiconductor device further includes a first isolation layer on the first surface of the semiconductor body and a first electrostatic discharge protection structure on the first isolation layer. The first electrostatic discharge protection structure has a first terminal and a second terminal. A second isolation layer is provided on the electrostatic discharge protection structure. A gate contact area on the second isolation layer is electrically coupled to the first terminal of the first electrostatic discharge protection structure. An electric contact structure is arranged in an overlap area between the gate contact area and the semiconductor body. The electric contact structure is electrically coupled to the second terminal of the first electrostatic discharge protection structure and electrically isolated from the gate contact area.