CMOS image sensor with shared sensing node
US9728574B2 · kind B2 · utility
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33Claims
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Key dates
| Filing date | Jan 3, 2014 |
| Grant date | Aug 8, 2017 |
| Priority date | — |
| Expiry date | Jan 3, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/18
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A CMOS image sensor has a pixel array provided with a plurality of unit pixels arranged in a matrix shape of rows and columns. Each of the unit pixels includes a photocharge generation means for generating photocharges by absorbing an external light; and a sensing node for receiving the photocharges transferred from the photocharge generation means, wherein the sensing node of the unit pixel in a previous scan line is shared with a sensing node of a unit pixel in a current scan line in response to a line select signal of the current line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.