Tunnel field effect transistors having low turn-on voltage
US9728639B2 · kind B2 · utility
3Cited by
11References
21Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 10, 2015 |
| Grant date | Aug 8, 2017 |
| Priority date | — |
| Expiry date | Mar 10, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Tunnel field effect transistors include a semiconductor substrate; a source region in the semiconductor substrate; a drain region in the semiconductor substrate; a channel region in the semiconductor substrate between the source region and the drain region; and a gate electrode on the semiconductor substrate above the channel region. The source region comprises a first region having a first conductivity type, a third region having a second conductivity type that is different from the first conductivity type, and a second region having an intrinsic conductivity type that is between the first region and the third region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.