Semiconductor device and method for fabricating the same
US9728666B2 · kind B2 · utility
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36Claims
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Key dates
| Filing date | Dec 27, 2013 |
| Grant date | Aug 8, 2017 |
| Priority date | — |
| Expiry date | Dec 14, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A semiconductor device includes a substrate, a first insulation layer formed on the substrate in a first region, a photon absorption seed layer formed on the first insulation layer in the first region and on the substrate in a second region separate from the first region, and a photon absorption layer formed on the photon absorption seed layer in the first region. The photon absorption seed layer has a particular structure that may assist in reducing dislocation density in a region that includes a photon absorption layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.