Method for the production of monolithic white diodes
US9728673B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2014 |
| Grant date | Aug 8, 2017 |
| Priority date | — |
| Expiry date | Jan 24, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02494
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a method for the production of a light-emitting diode, characterized in that the method comprises a step of preparing a light-emitting layer (20) on a front face of a support (10), said emitting layer comprising at least two adjacent quantum wells (21, 22, 23) emitting at different wavelengths, said quantum wells (21, 22, 23) being in contact with the front face of the support. According to the invention, the step in which the light-emitting layer is deposited comprises a sub-step consisting in locally varying the temperature of a rear face of the support opposite the front face such that the front face of the support comprises at least two zones at different temperatures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.