Patent · US Active

Optoelectronic component and method for the production thereof

US9728674B2 · kind B2 · utility

2Cited by
0References
11Claims
0Family size

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Inventors

Key dates

Filing dateOct 4, 2016
Grant dateAug 8, 2017
Priority date
Expiry dateOct 4, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/855

Abstract

The invention concerns an optoelectronic component comprising a layer structure with a light-active layer. In a first lateral region the light-active layer has a higher density of V-defects than in a second lateral region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.