High voltage monolithic LED chip
US9728676B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 9, 2013 |
| Grant date | Aug 8, 2017 |
| Priority date | — |
| Expiry date | Oct 9, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/841
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another with at least some of the active regions having a space between adjacent ones of the active regions that is 10 percent or less of the width of one or more of the active regions. The space is substantially not visible when the LED chip is emitting, such that the LED chips emits light similar to a filament.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.