Magnetic tunnel junction patterning using low atomic weight ion sputtering

US9728717B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Anthony J. Annunziata · Stamford, US
• Rohit Kilaru · New York, US
• Nathan P. Marchack · White Plains, US
• Hiroyuki Miyazoe · White Plains, US

Key dates

• Filing date: Jun 17, 2015
• Grant date: Aug 8, 2017
• Expiry date: Jun 17, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/01

Abstract

A method of magnetic tunnel junction patterning for magnetoresistive random access memory devices using low atomic weight ion sputtering. The method includes: providing a magnetoresistive random access memory device including a hard mask metal, a MTJ element, and a semiconductor substrate, wherein the hard mask metal is disposed on the MTJ element and, wherein the MTJ element is disposed on the semiconductor substrate; and etching back the MTJ element into a plurality of MTJ element pillars using a low atomic weight ion sputtering. A magnetoresistive random access memory device using low atomic weight ion sputtering. The device includes: a semiconductor substrate; a plurality of MTJ element pillars disposed on the semiconductor substrate, wherein the plurality of MTJ element pillars is etched from a MTJ element using a low atomic weight ion sputtering; and a hard mask metal disposed on the MTJ element pillars.