Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
US9732426B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2014 |
| Grant date | Aug 15, 2017 |
| Priority date | — |
| Expiry date | Jan 21, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
According to the present disclosure, a film containing carbon added at a high concentration is formed with high controllability. A method of manufacturing a semiconductor device includes forming a film containing silicon, carbon and a predetermined element on a substrate by performing a cycle a predetermined number of times. The predetermined element is one of nitrogen and oxygen. The cycle includes supplying a precursor gas containing at least two silicon atoms per one molecule, carbon and a halogen element and having an Si—C bonding to the substrate, and supplying a modifying gas containing the predetermined element to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.