Method for producing a vanadium-doped silicon carbide volume monocrystal, and vanadium-doped silicon carbide substrate

US9732438B2 · kind B2 · utility

Assignee

• SiCrystal GMBH · DE

Inventors

• Ralf Mueller · Germersheim, DE
• Matthias Stockmeier · Egloffstein, DE
• Michael Vogel · Nuremberg, DE

Key dates

• Filing date: Sep 9, 2015
• Grant date: Aug 15, 2017
• Expiry date: Sep 9, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01B1/04
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A silicon-carbide volume monocrystal is produced with a specific electrical resistance of at least 105 Ωcm. An SiC growth gas phase is generated in a crystal growing area of a crucible. The SiC volume monocrystal grows by deposition from the SiC growth gas phase. The growth material is transported from a supply area inside the growth crucible to a growth boundary surface of the growing monocrystal. Vanadium is added to the crystal growing area as a doping agent. A temperature at the growth boundary surface is set to at least 2250° C. and the SiC volume monocrystal grows doped with a vanadium doping agent concentration of more than 5·1017 cm−3. The transport of material from the SiC supply area to the growth boundary surface is additionally influenced. The growing temperature at the growth boundary surface and the material transport to the growth boundary surface are influenced largely independently of one another.