Michael Vogel
17Patents
1h-index
12Co-inventors
47Inventor score
Filing activity: Aug 9, 2010 → Dec 20, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8865324B2 | Production method for a bulk SiC single crystal with a large facet and monocrystalline SiC substrate with homogeneous resistance distribution | Emerging Cross-Sectional Technologies | 7 | Active |
| US8747982B2 | Production method for an SiC volume monocrystal with a homogeneous lattice plane course and a monocrystalline SiC substrate with a homogeneous lattice plane course | Emerging Cross-Sectional Technologies | 1 | Active |
| US11236438B2 | Silicon carbide substrate and method of growing SiC single crystal boules | Chemistry; Metallurgy | 1 | Active |
| US12195878B2 | SiC crystals with an optimal orientation of lattice planes for fissure reduction and method of producing same | Chemistry; Metallurgy | 0 | Active |
| US9590046B2 | Monocrystalline SiC substrate with a non-homogeneous lattice plane course | Emerging Cross-Sectional Technologies | 0 | Active |
| US11261536B2 | Production method and growth arrangement for producing a bulk SiC single crystal by arranging at least two insulation cylinder components to control a variation in a volume element density | Chemistry; Metallurgy | 0 | Active |
| US8758510B2 | Production method for an SiC volume monocrystal with a non-homogeneous lattice plane course and a monocrystalline SiC substrate with a non-homogeneous lattice plane course | Emerging Cross-Sectional Technologies | 0 | Active |
| US11560643B2 | System for efficient manufacturing of a plurality of high-quality semiconductor single crystals by physical vapor transport | Chemistry; Metallurgy | 0 | Active |
| US11624124B2 | Silicon carbide substrate and method of growing SiC single crystal boules | Emerging Cross-Sectional Technologies | 0 | Active |
| US11479875B2 | System for horizontal growth of high-quality semiconductor single crystals by physical vapor transport | Chemistry; Metallurgy | 0 | Active |
| US9732438B2 | Method for producing a vanadium-doped silicon carbide volume monocrystal, and vanadium-doped silicon carbide substrate | Electricity | 0 | Active |
| US11515140B2 | Chamfered silicon carbide substrate and method of chamfering | Emerging Cross-Sectional Technologies | 0 | Active |
| US11474283B2 | Super resolution for magneto-optical microscopy | Physics | 0 | Active |
| US9376764B2 | Physical vapor transport growth system for simultaneously growing more than one SiC single crystal and method of growing | Chemistry; Metallurgy | 0 | Active |
| US11041254B2 | Chamfered silicon carbide substrate and method of chamfering | Performing Operations; Transporting | 0 | Active |
| US12157955B2 | Method for simultaneously manufacturing more than one single crystal of a semiconductor material by physical vapor transport | Chemistry; Metallurgy | 0 | Active |
| US11781245B2 | Silicon carbide substrate and method of growing SiC single crystal boules | Chemistry; Metallurgy | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.