Method of processing substrate, substrate processing apparatus, and recording medium
US9735007B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 17, 2015 |
| Grant date | Aug 15, 2017 |
| Priority date | — |
| Expiry date | Sep 17, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02636
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of processing a substrate includes: growing a first layer including a first element and a second element by supplying a first precursor containing the first element and a second precursor containing the second element to the substrate; and growing a second layer including the second element and a third element by supplying the second precursor and a third precursor containing the third element to the substrate. The act of growing the first layer and the act of growing the second layer are alternately performed a predetermined number of times, and the act of growing the first layer is performed before the act of growing the second layer to selectively grow a laminated film on a conductive film exposed on the surface of the substrate. The first layer and the second layer are laminated to form the laminated film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.