Integrated circuit devices having through-silicon vias and methods of manufacturing such devices
US9735090B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 2, 2015 |
| Grant date | Aug 15, 2017 |
| Priority date | — |
| Expiry date | Oct 7, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/18161
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit device includes a semiconductor structure, a through-silicon-via (TSV) structure that penetrates through the semiconductor structure and a connection terminal connected to the TSV structure. A metal capping layer includes a flat capping portion that covers the bottom surface of the connection terminal and a wedge-shaped capping portion that is integrally connected to the flat capping portion and that partially covers a side wall of the connection terminal. The metal capping layer may be formed by an electroplating process in which the connection terminal is in contact with a metal strike electroplating solution while a pulse-type current is applied.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.