Semiconductor devices having bridge layer and methods of manufacturing the same
US9735158B2 · kind B2 · utility
2Cited by
5References
20Claims
0Family size
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Key dates
| Filing date | Jun 9, 2016 |
| Grant date | Aug 15, 2017 |
| Priority date | — |
| Expiry date | Jun 9, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0149
Abstract
A semiconductor device includes a substrate, a first active fin and a second active fin on the substrate, respectively, a plurality of first epitaxial layers on the first active fin and on the second active fin, respectively, a plurality of second epitaxial layers on the plurality of first epitaxial layers, a bridge layer connecting the plurality of second epitaxial layers to each other, and a third epitaxial layer on the bridge layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.