Image sensor including a transfer transistor having a vertical channel and pixel transistors having thin film channels
US9735197B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2016 |
| Grant date | Aug 15, 2017 |
| Priority date | — |
| Expiry date | Oct 25, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/80377
Abstract
Image sensors are provided. The image sensor may include a photodiode formed in a substrate, a lower interlayer dielectric layer formed over the substrate, a drive transistor gate electrode formed over the lower interlayer dielectric layer, and a transfer transistor gate electrode including an upper portion and a lower portion. The upper portion of the transfer transistor gate electrode may be formed over the drive transistor gate electrode. The lower portion of the transfer transistor gate electrode may be formed in a pillar shape and vertically extends from the upper portion of the transfer transistor gate electrode through the drive transistor gate electrode and the lower interlayer dielectric layer into the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.