Patent · US Active

Select device for memory cell applications

US9735200B2 · kind B2 · utility

1Cited by

6References

19Claims

0Family size

Assignee

Micron Technology, Inc. · US

Inventors

David H. Wells · Boise, US
Christopher D. Cardon · Boise, US
Caner Onal · Palo Alto, US

Key dates

Filing date	Jul 21, 2016
Grant date	Aug 15, 2017
Priority date	—
Expiry date	Jul 21, 2036

Classification

Technology area (CPC G)Physics
CPC primaryG11C2213/52
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

The present disclosure includes select devices and methods of using select device for memory cell applications. An example select device includes a first electrode having a particular geometry, a semiconductor material formed on the first electrode and a second electrode having the particular geometry with formed on the semiconductor material, wherein the select device is configured to snap between resistive states in response to signals that are applied to the select device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.