Method for manufacturing a semiconductor structure having a trench with high aspect ratio
US9735232B2 · kind B2 · utility
3Cited by
2References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 24, 2014 |
| Grant date | Aug 15, 2017 |
| Priority date | — |
| Expiry date | Jul 24, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
Abstract
The present disclosure provides a method for manufacturing a semiconductor structure. The method includes several operations as follows. A semiconductor substrate is received. A trench along a depth in the semiconductor substrate is formed. The semiconductor substrate is exposed in a hydrogen containing atmosphere. Dopants are inserted into a portion of the semiconductor substrate. A dielectric is filled in the trench. The dopants are driven into a predetermined distance in the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.