Trench-gate RESURF semiconductor device and manufacturing method
US9735254B2 · kind B2 · utility
0Cited by
7References
12Claims
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Key dates
| Filing date | Mar 11, 2015 |
| Grant date | Aug 15, 2017 |
| Priority date | — |
| Expiry date | Mar 11, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A trench-gate device with lateral RESURF pillars has an additional implant beneath the gate trench. The additional implant reduces the effective width of the semiconductor drift region between the RESURF pillars, and this provides additional gate shielding which improves the electrical characteristics of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.