Semiconductor switch with integrated temperature sensor

US9735264B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Norbert Krischke · Munich, DE
• Bernhard Auer · Millstatt, AT
• Robert Illing · Finkenstein, AT

Key dates

• Filing date: Aug 31, 2015
• Grant date: Aug 15, 2017
• Expiry date: Aug 31, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/117

Abstract

A semiconductor device includes a semiconductor body, at least one wiring layer disposed on the semiconductor body and a field effect transistor integrated in the semiconductor body. The field effect transistor has a plurality of gate electrodes residing in corresponding gate trenches formed in the semiconductor body. A first circuit is integrated in the semiconductor body adjacent to the field effect transistor, and a second circuit is integrated in the semiconductor body remote from the first circuit. A first additional trench is formed in the semiconductor body and includes at least one connecting line which electrically connects the first circuit and the second circuit. The semiconductor device also includes at least one conductive pad formed in the at least one wiring layer. The at least one conductive pad is arranged to at least partially cover the first additional trench to form a shielding of the at least one connecting line.