Semiconductor device
US9735290B2 · kind B2 · utility
0Cited by
1References
7Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 30, 2015 |
| Grant date | Aug 15, 2017 |
| Priority date | — |
| Expiry date | Dec 30, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/117
Abstract
An integrated diode (100) comprising a substrate (102); a Schottky cell (104) on the substrate (102); a heterojunction cell (106) on the substrate (102); a common anode contact (108) for both the Schottky cell (104) and the heterojunction cell (106); and a common cathode contact (110) for both the Schottky cell (104) and the heterojunction cell (106).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.