Patent · US Active

Semiconductor device

US9735290B2 · kind B2 · utility

0Cited by
1References
7Claims
0Family size

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Key dates

Filing dateDec 30, 2015
Grant dateAug 15, 2017
Priority date
Expiry dateDec 30, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D64/117

Abstract

An integrated diode (100) comprising a substrate (102); a Schottky cell (104) on the substrate (102); a heterojunction cell (106) on the substrate (102); a common anode contact (108) for both the Schottky cell (104) and the heterojunction cell (106); and a common cathode contact (110) for both the Schottky cell (104) and the heterojunction cell (106).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.