Semiconductor device and Zener diode
US9735291B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2016 |
| Grant date | Aug 15, 2017 |
| Priority date | — |
| Expiry date | Mar 10, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/128
Abstract
A semiconductor device includes a substrate; a well region of a first-conductivity-type, disposed in the substrate; a first impurity region of a first-conductivity-type disposed in the well region; a second impurity region of the second-conductivity-type disposed in the well region, the second-conductivity-type being opposite to the first-conductivity-type; a third impurity region disposed in the well region, a portion of the first impurity region overlapping a first portion of the third impurity region, a portion of the second impurity region overlapping a second portion of the third impurity region, and a third portion of the third impurity region being disposed between the first impurity region and the second impurity region; and a fourth impurity region and a barrier layer disposed in the substrate, the fourth impurity region and the barrier layer enclosing the well region from around and below, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.