Patent · US Active

Method for forming a semiconducting portion by epitaxial growth on a strained portion

US9735317B2 · kind B2 · utility

0Cited by

2References

15Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Vincent Reboud · Paris, FR
Alban Gassenq · Brioude, FR
Kevin Guilloy · Grenoble, FR
Vincent Calvo · Fontaine, FR
Alexei Tchelnokov · Meylan, FR

Key dates

Filing date	Sep 30, 2016
Grant date	Aug 15, 2017
Priority date	—
Expiry date	Sep 30, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/036
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The invention pertains to formation of a semiconducting portion (60) by epitaxial growth on a strained germination portion (40), comprising the steps in which a cavity (21) is produced under a structured part (11) by rendering free a support layer (30) situated facing the structured part (11), a central portion (40), termed the strained germination portion, then being strained; and a semiconducting portion (60) is formed by epitaxial growth on the strained germination portion (40), wherein the structured part (11) is furthermore placed in contact with the support layer (30) in such a way as to bind the structured part (11) of the support layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.