Phase change memory element
US9735352B2 · kind B2 · utility
2Cited by
47References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2015 |
| Grant date | Aug 15, 2017 |
| Priority date | — |
| Expiry date | Dec 28, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
A phase-change memory element with an electrically isolated conductor is provided. The phase-change memory element includes: a first electrode and a second electrode; a phase-change material layer electrically connected to the first electrode and the second electrode; and at least two electrically isolated conductors, disposed between the first electrode and the second electrode, directly contacting the phase-change material layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.