Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US9738991B2 · kind B2 · utility
9Cited by
59References
10Claims
0Family size
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Key dates
| Filing date | Aug 9, 2013 |
| Grant date | Aug 22, 2017 |
| Priority date | — |
| Expiry date | Mar 6, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24355
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming an SiC crystal, the method including: placing a SiC seed in a growth vessel, heating the growth vessel, and evacuating the growth vessel, wherein the seed is levitated as a result of a temperature and pressure gradient, and gas flows from a growth face of the seed, around the edge of the seed, and into a volume behind the seed, which is pumped by a vacuum system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.