Subnanosecond scintillation detector
US9739898B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 26, 2015 |
| Grant date | Aug 22, 2017 |
| Priority date | — |
| Expiry date | Mar 26, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/1898
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
A scintillation detector, including a scintillator that emits scintillation; a semiconductor photodetector having a surface area for receiving the scintillation, wherein the surface area has a passivation layer configured to provide a peak quantum efficiency greater than 40% for a first component of the scintillation, and the semiconductor photodetector has built in gain through avalanche multiplication; a coating on the surface area, wherein the coating acts as a bandpass filter that transmits light within a range of wavelengths corresponding to the first component of the scintillation and suppresses transmission of light with wavelengths outside said range of wavelengths; and wherein the surface area, the passivation layer, and the coating are controlled to increase the temporal resolution of the semiconductor photodetector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.