Hemiacetal compound, polymer, resist composition, and patterning process
US9740100B2 · kind B2 · utility
1Cited by
6References
11Claims
0Family size
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Key dates
| Filing date | Feb 11, 2016 |
| Grant date | Aug 22, 2017 |
| Priority date | — |
| Expiry date | Feb 11, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/325
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A polymer for resist use is obtainable from a hemiacetal compound having formula (1a) wherein R1 is H, CH3 or CF3, R2 to R4 each are H or a monovalent hydrocarbon group, X1 is a divalent hydrocarbon group, ZZ designates a non-aromatic mono- or polycyclic ring of 4 to 20 carbon atoms having a hemiacetal structure, k1=0 or 1, and k2=0 to 3. A resist composition comprising the polymer displays controlled acid diffusion and low roughness during both positive and negative tone developments.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.