Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
US9741555B2 · kind B2 · utility
1Cited by
3References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2016 |
| Grant date | Aug 22, 2017 |
| Priority date | — |
| Expiry date | Jan 13, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device, includes: supplying a first precursor and a first nitriding agent onto a substrate having a surface formed thereon with an oxygen-containing film in order to form an initial film on the oxygen-containing film; modifying the initial film into a first nitride film by nitriding the initial film with plasma; and supplying a second precursor and a second nitriding agent onto the substrate in order to form a second nitride film on the first nitride film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.