Method of forming mark pattern, recording medium and method of generating mark data
US9741564B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2015 |
| Grant date | Aug 22, 2017 |
| Priority date | — |
| Expiry date | Jul 30, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/2002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of forming a mark pattern according to the embodiments, a film to be processed on a substrate is coated with a photosensitive film, and the photosensitive film is irradiated with exposure light via a mask. On the mask, a first circuit pattern having a first transmittance and a mark having a second transmittance and used to measure a superposition between films are arranged. By irradiating with the exposure light, a second circuit pattern having a first film thickness and a mark pattern having a second film thickness thinner than the first film thickness are formed on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.