Cyclic deposition method for thin film and manufacturing method for semiconductor, and semiconductor device
US9741574B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 23, 2014 |
| Grant date | Aug 22, 2017 |
| Priority date | — |
| Expiry date | Sep 23, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of cyclically depositing a thin film including: performing an oxide depositing operation of repeatedly performing a deposition operation, a first purge operation, a reaction operation, and a second purge operation, wherein the deposition operation deposits silicon on a target by injecting a silicon precursor into a chamber into which the target is loaded, the first purge operation removes a non-reacted silicon precursor and a reacted byproduct from inside the chamber, the reaction operation supplies a first reaction source including oxygen into the chamber to form the deposited silicon as an oxide including silicon, and the second purge operation removes a non-reacted first reaction source and a reacted byproduct from the inside of the chamber; and performing a plasma processing operation of supplying plasma made of a second reaction source including nitrogen to the inside of the chamber to process the oxide including the silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.