Semiconductor device and semiconductor device manufacturing method
US9741587B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 8, 2016 |
| Grant date | Aug 22, 2017 |
| Priority date | — |
| Expiry date | Jul 8, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13055
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a semiconductor device manufacturing method and semiconductor device such that manufacturing can be simplified and the thickness of the semiconductor device can be reduced. The semiconductor device includes an insulated circuit substrate having on one main surface thereof a first metal layer and a second metal layer, a metal plate conductively connected to the first metal layer, a first semiconductor element including on front and rear surfaces thereof a plurality of metal electrodes, a first insulating member disposed on a side surface of the first semiconductor element, a second insulating member disposed on the first insulating member and on the first semiconductor element, and a third metal layer, in which at least one portion thereof is disposed on the second insulating member and which conductively connects the metal electrode of the first semiconductor element and the second metal layer on the insulated circuit substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.