Methods for directly bonding silicon to silicon or silicon carbide to silicon carbide
US9741685B2 · kind B2 · utility
1Cited by
4References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 12, 2016 |
| Grant date | Aug 22, 2017 |
| Priority date | — |
| Expiry date | Jul 12, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/10272
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method for bonding a first silicon part to a second silicon part includes arranging the first silicon part and the second silicon part in direct physical contact on a surface in a thermal insulating structure; controlling pressure in the thermal insulating structure to a predetermined pressure; controlling temperature in the thermal insulating structure to a predetermined temperature using one or more heaters; and bonding the first silicon part and the second silicon part during a process period. The predetermined temperature is in a temperature range that is greater than or equal to 1335° C. and less than 1414° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.