Methods to form high density through-mold interconnections
US9741692B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2014 |
| Grant date | Aug 22, 2017 |
| Priority date | — |
| Expiry date | Sep 15, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1815
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of fabricating a microelectronic device comprising forming a microelectronic substrate having a plurality microelectronic device attachment bond pads and at least one interconnection bond pad formed in and/or on an active surface thereof, attaching a microelectronic device to the plurality of microelectronic device attachment bond pads, forming a mold chase having a mold body and at least one projection extending from the mold body, wherein the at least one projection includes at least one sidewall and a contact surface, contacting the mold chase projection contact surface to a respective microelectronic substrate interconnection bond pad, disposing a mold material between the microelectronic substrate and the mold chase, and removing the mold chase to form at least one interconnection via extending from a top surface of the mold material to a respective microelectronic substrate interconnection bond pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.