Transient voltage suppressor and ESD protection device and array thereof

US9741708B2 · kind B2 · utility

Assignee

• UBIQ Semiconductor Corp. · TW

Inventors

• Kei-Kang Hung · Changhua City, TW
• Chau-Chun Wen · Zhubei City, TW

Key dates

• Filing date: Jun 25, 2015
• Grant date: Aug 22, 2017
• Expiry date: Jun 25, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/85

Abstract

Provided is a transient voltage suppressor including a substrate, a well region of a first conductivity type, a first doped region of a second conductivity type, and a second doped region of the second conductivity type. The substrate is electrically floating. The well region is located in the substrate. The first doped region is located in the well region to form a diode, and the first doped region is electrically connected to a first voltage. The second doped region is located in the well region, and the second doped region is electrically connected to a second voltage.